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For the Inventor, By the Inventor

Albany, NY, United States of America

Thamarai Selvi Devarajan

USPTO Granted Patents = 18 

Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 44(Granted Patents)


Location History:

  • Albany, NY (US) (2016 - 2021)
  • Niskayuna, NY (US) (2022)

Company Filing History:

goldMedal18 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2016-2024

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):
1. 12148699 - High aspect ratio buried power rail metallization (2024-11-19),
2. 11302797 - Approach to bottom dielectric isolation for vertical transport fin field effect transistors (2022-04-12),
3. 10896816 - Silicon residue removal in nanosheet transistors (2021-01-19),
4. 10840354 - Approach to bottom dielectric isolation for vertical transport fin field effect transistors (2020-11-17),
5. 10629702 - Approach to bottom dielectric isolation for vertical transport fin field effect transistors (2020-04-21),
6. 10388571 - Fin type field effect transistors with different pitches and substantially uniform fin reveal (2019-08-20),
7. 10366928 - Hybridization fin reveal for uniform fin reveal depth across different fin pitches (2019-07-30),
8. 10355109 - Spacer formation on semiconductor device (2019-07-16),
9. 10242882 - Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication (2019-03-26),
10. 10163721 - Hybridization fin reveal for uniform fin reveal depth across different fin pitches (2018-12-25),
11. 10020229 - Fin type field effect transistors with different pitches and substantially uniform fin reveal (2018-07-10),
12. 9997352 - Polysilicon residue removal in nanosheet MOSFETs (2018-06-12),
13. 9935015 - Hybridization fin reveal for uniform fin reveal depth across different fin pitches (2018-04-03),
14. 9911831 - Spacer formation on semiconductor device (2018-03-06),
15. 9754798 - Hybridization fin reveal for uniform fin reveal depth across different fin pitches (2017-09-05),

Title: Thamarai Selvi Devarajan: Innovator in Semiconductor Technology

Introduction

Thamarai Selvi Devarajan is a prominent inventor based in Albany, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work focuses on advancing the capabilities and efficiency of semiconductor components.

Latest Patents

Among his latest patents is the "High aspect ratio buried power rail metallization." This invention involves a semiconductor component that includes an area of dielectric material extending below the uppermost surface of a substrate. The component features a trench that extends from above the substrate's surface into the dielectric area. It also includes a non-metal liner coating the interior surfaces of the trench, along with a metal liner coating the non-metal liner. The power rail is formed in the trench, making direct contact with either the metal or non-metal liner, extending into the dielectric area and above the substrate's surface. Another notable patent is the "Approach to bottom dielectric isolation for vertical transport fin field effect transistors." This invention describes a vertical transport fin field effect transistor (VT FinFET) that includes vertical fins on a substrate surface, an L-shaped or U-shaped spacer trough adjacent to the fins, and a gate dielectric layer on the sidewalls of the fins and the spacer trough.

Career Highlights

Thamarai Selvi Devarajan is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in semiconductor technology. His extensive experience and expertise have positioned him as a key figure in his field.

Collaborations

Throughout his career, Thamarai has collaborated with notable colleagues, including Zhenxing Bi and Donald Francis Canaperi. These collaborations have further enhanced his contributions to the semiconductor industry.

Conclusion

Thamarai Selvi Devarajan is a distinguished inventor whose work in semiconductor technology has led to numerous patents and advancements in the field. His innovative spirit and dedication to research continue to drive progress in the industry.

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