The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Sep. 26, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Zhenxing Bi, Niskayuna, NY (US);

Thamarai S. Devarajan, Albany, NY (US);

Nicolas J. Loubet, Guilderland, NY (US);

Binglin Miao, Loudonville, NY (US);

Muthumanickam Sankarapandian, Niskayuna, NY (US);

Charan V. Surisetty, Milpitas, CA (US);

Chun W. Yeung, Niskayuna, NY (US);

Jingyun Zhang, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 29/40 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); B82Y 10/00 (2013.01); H01L 21/02 (2013.01); H01L 29/0673 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method for forming a nanosheet semiconductor device includes forming a nanosheet stack comprising channel nanosheets. The method includes depositing silicon on the nanosheet stack, the silicon completely filling a space between adjacent channel nanosheets. The method includes etching the silicon. The method includes exposing the nanosheet stack to a gas phase heat treatment.


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