The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2024

Filed:

Jun. 13, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Sagarika Mukesh, Albany, NY (US);

Devika Sarkar Grant, Amsterdam, NY (US);

Fee Li Lie, Albany, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Thamarai selvi Devarajan, Niskayuna, NY (US);

Aakrati Jain, Albany, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 21/76874 (2013.01); H01L 23/5283 (2013.01); H01L 23/53252 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor component includes an area of dielectric material extending below an uppermost surface of a substrate. The semiconductor component further includes a trench formed so as to extend from above the uppermost surface of the substrate into the area of dielectric material. The semiconductor component further includes a non-metal liner coating interior surfaces of the trench. The semiconductor component further includes a metal liner coating interior surfaces of the non-metal liner. The semiconductor component further includes a power rail formed in the trench in direct contact with at least one of the metal liner or the non-metal liner such that the power rail extends into the area of dielectric material and above the uppermost surface of the substrate.


Find Patent Forward Citations

Loading…