The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Mar. 22, 2017
International Business Machines Corporation, Armonk, NY (US);
Zhenxing Bi, Niskayuna, NY (US);
Donald F. Canaperi, Bridgewater, CT (US);
Thamarai S. Devarajan, Albany, NY (US);
Nicolas J. Loubet, Guilderland, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is presented for forming a semiconductor device. The method includes depositing a sacrificial layer on a fin structure formed on a substrate and then filled with polysilicon, etching a portion of the polysilicon material via a first etching process, and pre-cleaning the surface native oxide layer. The method further includes etching the remaining polysilicon material via a second etching process, and removing polysilicon etch residue formed adjacent the fin structure by a cleaning process. The pre-cleaning is performed by applying ammonia (NH) and nitrogen trifluoride (NF) or by applying buffered hydrofluoric acid (BHF). The first etching process is reactive ion etching (RIE) and the second etching process involves applying nitrogen trifluoride (NF) and hydrogen gas (H).