The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Sep. 16, 2002
Richard S. Wise, New Windsor, NY (US);
Sadanand V. Deshpande, Fishkill, NY (US);
Wendy Yan, Somers, NY (US);
Soctt D. Allen, Dumont, NJ (US);
Arpan P. Mahorowala, Bronxville, NY (US);
Richard S. Wise, New Windsor, NY (US);
Sadanand V. Deshpande, Fishkill, NY (US);
Wendy Yan, Somers, NY (US);
Soctt D. Allen, Dumont, NJ (US);
Arpan P. Mahorowala, Bronxville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for removing carbon from or stripping a TERA layer. The method includes exposing the TERA layer to a plasma containing an effective amount of nitrogen, and, optionally, oxygen or fluorine. The method is compatible with fluorine based etching systems, and may thus be performed in the same etching system as other etching steps. For example, the method may be performed in the same system as a fluorine based plasma etch for oxide or nitride. The invention includes the method of stripping a TERA layer, etching an oxide layer, and etching a nitride layer in situ in the same etching system. The method is performed at low ion energies to avoid damaging oxide or nitride layers under the TERA film and to provide good selectivity.