The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
May. 30, 2003
Sadanand V. Deshpande, Fishkill, NY (US);
Bruce B. Doris, Brewster, NY (US);
Werner A. Rausch, Stormville, NY (US);
James A. Slinkman, Montpelier, VT (US);
Sadanand V. Deshpande, Fishkill, NY (US);
Bruce B. Doris, Brewster, NY (US);
Werner A. Rausch, Stormville, NY (US);
James A. Slinkman, Montpelier, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for modulating the stress caused by bird beak formation of small width devices by a nitrogen plasma treatment. The nitrogen plasma process forms a nitride liner about the trench walls that serves to prevent the formation of bird beaks in the isolation region during a subsequent oxidation step. In one embodiment, the plasma nitridation process occurs after trench etching, but prior to trench fill. In yet another embodiment, the plasma nitridation process occurs after trench fill. In yet another embodiment, a block mask is formed over predetermined active areas of the etched substrate prior to the plasma nitridation process. This embodiment is used in protecting the PFET device area from the plasma nitridation process thereby providing a means to form a PFET device area in which stress caused by bird beak formation increases the device performance of the PFET.