Akihisa Sekiguchi

Title: The Innovative Contributions of Akihisa Sekiguchi

Introduction

Akihisa Sekiguchi is a prominent inventor based in Briarcliff Manor, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on enhancing the performance and efficiency of CMOS applications.

Latest Patents

Among his latest patents is a method for forming an ultra-thin HfSiO metal silicate film for high-performance CMOS applications. This patent details a semiconductor structure and the method of forming it, which involves creating a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer. The process includes forming a layer that contains a source of transitional metal atoms and annealing the structure to diffuse these atoms into the base gate dielectric layer. Another notable patent involves the formation of a disposable spacer to post-dope a gate conductor. This method outlines the steps for creating a doped gate structure on a semiconductor device, including the formation of a gate stack and the use of a fat spacer to protect critical regions during ion implantation.

Career Highlights

Akihisa Sekiguchi has had a distinguished career at the International Business Machines Corporation (IBM). His innovative approaches have led to advancements in semiconductor technology, making significant impacts on the industry.

Collaborations

He has collaborated with notable coworkers such as Toshiharu Furukawa and David V Horak, contributing to various projects that enhance semiconductor performance.

Conclusion

Akihisa Sekiguchi's work exemplifies the spirit of innovation in the semiconductor field. His patents and contributions continue to influence the development of high-performance technologies.