The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Nov. 28, 2003
Anthony I-chih Chou, Beacon, NY (US);
Michael Patrick Chudzik, Beacon, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Paul Daniel Kirsch, Fishkill, NY (US);
Byoung Hun Lee, Wappingers Falls, NY (US);
Katsunori Onishi, Fishkill, NY (US);
Heemyoung Park, LaGrangeville, NY (US);
Kristen Colleen Scheer, Milton, NY (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
Anthony I-Chih Chou, Beacon, NY (US);
Michael Patrick Chudzik, Beacon, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Paul Daniel Kirsch, Fishkill, NY (US);
Byoung Hun Lee, Wappingers Falls, NY (US);
Katsunori Onishi, Fishkill, NY (US);
Heemyoung Park, LaGrangeville, NY (US);
Kristen Colleen Scheer, Milton, NY (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Gate oxides having different thicknesses are formed on a semiconductor substrate by forming a first gate oxide on the top surface of the substrate, forming a sacrificial hard mask over a selected area of the first gate oxide; and then forming a second gate oxide. A first poly layer may be formed on the first gate oxide, under the hard mask. After the hard mask is removed, a second poly layer may be formed over the second gate oxide and over the first poly layer. This enables the use of high-k dielectric materials, and the first gate oxide can be thinner than the second gate oxide.