Lagrangeville, NY, United States of America

Heemyoung Park

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2007.


Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Unveiling the Innovations of Inventor Heemyoung Park

Introduction: Heemyoung Park, a talented inventor hailing from Lagrangeville, NY, has made a significant impact in the field of semiconductor technology with his groundbreaking patent on "Forming gate oxides having multiple thicknesses."

Latest Patents: With a remarkable total of 1 patent to his name, Heemyoung Park's expertise lies in the creation of gate oxides with varying thicknesses on semiconductor substrates. This innovative process allows for the use of high-k dielectric materials, paving the way for enhanced semiconductor devices.

Career Highlights: Heemyoung Park is associated with the renowned International Business Machines Corporation, more commonly known as IBM. His tenure at IBM has been marked by a dedication to pushing the boundaries of semiconductor technology and driving forward cutting-edge research and development initiatives.

Collaborations: In his professional journey, Heemyoung Park has had the privilege of working alongside esteemed colleagues such as Anthony I-Chih Chou and Michael Patrick Chudzik. This collaborative environment has undoubtedly nurtured his inventive spirit and contributed to the success of his pioneering projects.

Conclusion: Heemyoung Park's inventive prowess and contributions to the semiconductor industry underscore his status as a visionary inventor. His patent on forming gate oxides with multiple thicknesses exemplifies his commitment to innovation and sets a benchmark for future advancements in the field.

Profile summary based on public USPTO records.
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