The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2009
Filed:
Apr. 21, 2005
Wenjuan Zhu, Carmel, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Dae-gyu Park, Wappingers Falls, NY (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
Wenjuan Zhu, Carmel, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Dae-Gyu Park, Wappingers Falls, NY (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming a uniform layer which contains a source of transitional metal atoms, and then annealing the structure to diffuse the transitional metal atoms from their source through the diffusion-controlling material and into the base gate dielectric layer.