The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
May. 30, 2003
Bruce B. Doris, Brewster, NY (US);
Mark C. Hakey, Fairfax, VT (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
Bruce B. Doris, Brewster, NY (US);
Mark C. Hakey, Fairfax, VT (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a cost effective and simple method of forming isolation regions, such as shallow trench isolation regions, in a semiconductor substrate that avoids etching into the trench. In the present invention, the isolation regions are formed by utilizing a selective ion implantation process that creates an oxygen implant region near the upper surface of the substrate. Upon a subsequent anneal step, the oxygen implant region is converted into an isolation region that has an upper surface that is substantially coplanar with the upper surface of the substrate.