The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Jul. 03, 2001
Anthony I. Chou, Beacon, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Akihisa Sekiguchi, Briarcliff Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of selectively forming either an epi-Si-containing or a silicide layer on portions of a Si-containing substrate wherein a nitrogen-containing layer formed by a low-temperature nitridation process is employed to prevent formation of the epi-Si-containing or silicide layer in predetermined areas of the substrate. The method of the present invention includes the steps of subjecting at least one exposed surface of a Si-containing substrate to a low- temperature nitridation process so as to form a nitrogen-containing layer at or near the at least one exposed surface, wherein other surfaces of the Si-containing substrate are protected by a patterned photoresist; removing the patterned photoresist from the other surfaces of the Si-containing substrate; and forming an epi-Si-containing layer or a silicide layer on the other surfaces of the substrate which do not contain the nitrogen-containing layer. In accordance with the present invention, epi-Si-containing or silicide is not formed in areas containing the nitrogen-containing layer.