The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2019
Filed:
Mar. 18, 2017
International Business Machines Corporation, Armonk, NY (US);
Zeon Corporation, Tokyo, JP;
Ravi K. Dasaka, Danbury, CT (US);
Sebastian U. Engelmann, White Plains, NY (US);
Nicholas C. M. Fuller, North Hills, NY (US);
Masahiro Nakamura, Eastchester, NY (US);
Richard S. Wise, Los Altos, CA (US);
International Business Machines Corporation, Armonk, NY (US);
ZEON CORPORATION, Tokyo, JP;
Abstract
A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.