The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Oct. 23, 2014
International Business Machines Corporation, Armonk, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Bachir Dirahoui, Bedford Hills, NY (US);
Rishikesh Krishnan, Poughkeepsie, NY (US);
Siddarth A. Krishnan, Peekskill, NY (US);
Oh-jung Kwon, Hopewell Junction, NY (US);
Paul C. Parries, Wappingers Falls, NY (US);
Hongwen Yan, Somers, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.