logo

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Mahmoud M Khojasteh

This inventor holds 49 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Semiconductor Processing. Top assignees: International Business Machines Corporation, Advanced Technology Materials, Inc., Zeon Corporation. Active years: 1987-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mahmoud M Khojasteh. Retrieved from https://idiyas.com/inventor/mahmoud-m-khojasteh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 49 

% Patents Active = 55.1

 

Average Co-Inventor Count = 5.0

ph-index = 9

Forward Citations = 254(Granted Patents)


Location History:

  • Fishkill, NY (US) (1987)
  • Wappingers Falls, NY (US) (1989)
  • Yorktown Heights, NY (US) (2012)
  • Poughkeepsie, NY (US) (1997 - 2022)

Company Filing History:

goldMedal49 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal3 out of 622 
 
Advanced Technology Materials, Inc.
 patents
bronzeMedal2 out of 1,297 
 
Zeon Corporation
 patents
4. 1 out of 1 
 
Shipley Company, L.l.c. of Marlborough
 patent
where one patent can have more than one assignee

Years Active: 1987-2022

Loading Chart...
Loading Chart...
Areas of Expertise:
III-V Transistors
Photoresist Materials
Electroless Metallization
Nanostructures
Chemical-Mechanical Planarization
Graphoepitaxy
Doping Techniques
Antireflective Coatings
Patterning Methods
Silicon Nanosheets
Catalyst Immobilization
Lithographic Processes
49 patents (USPTO):Explore Patents
1. 11444185 - III-V lateral bipolar junction transistor on local facetted buried oxide layer (2022-09-13),
2. 11437502 - III-V lateral bipolar junction transistor on local facetted buried oxide layer (2022-09-06),
3. 10748990 - Stacked indium gallium arsenide nanosheets on silicon with bottom trapezoid isolation (2020-08-18),
4. 10615271 - III-V lateral bipolar junction transistor on local facetted buried oxide layer (2020-04-07),
5. 10546928 - Forming stacked twin III-V nano-sheets using aspect-ratio trapping techniques (2020-01-28),
6. 10388727 - Stacked indium gallium arsenide nanosheets on silicon with bottom trapezoid isolation (2019-08-20),
7. 10276384 - Plasma shallow doping and wet removal of depth control cap (2019-04-30),
8. 10167443 - [object Object] (2019-01-01),
9. 9881793 - Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (DSA) patterning (2018-01-30),
10. 9536731 - [object Object] (2017-01-03),
11. 9058976 - Cleaning composition and process for cleaning semiconductor devices and/or tooling during manufacturing thereof (2015-06-16),
12. 8920567 - Post metal chemical-mechanical planarization cleaning process (2014-12-30),
13. 8647445 - Process for cleaning semiconductor devices and/or tooling during manufacturing thereof (2014-02-11),
14. 8618036 - Aqueous cerium-containing solution having an extended bath lifetime for removing mask material (2013-12-31),
15. 8574680 - Materials and methods for immobilization of catalysts on surfaces and for selective electroless metallization (2013-11-05),

Title: Mahmoud M Khojasteh: Pioneering Innovator in Semiconductor Technology

Introduction:

Mahmoud M Khojasteh, a visionary inventor based in Poughkeepsie, NY, is renowned for his exceptional contributions to the field of semiconductor technology. With an impressive portfolio of 49 patents, his relentless pursuit of excellence continues to inspire the next generation of inventors and shape the future of technology.

Latest Patents:

Among his latest patents is the "III-V lateral bipolar junction transistor on local facetted buried oxide layer." This groundbreaking invention features a bipolar junction transistor (LBJT) device that leverages advanced III-V semiconductor materials to enhance performance and efficiency. The unique design includes emitter and collector regions with varying band gaps, showcasing Khojasteh's innovative approach to semiconductor device structures.

Career Highlights:

Mahmoud M Khojasteh has made significant contributions to top-tier companies in the industry, including International Business Machines Corporation (IBM) and Advanced Technology Materials, Inc. His expertise in semiconductor technologies has led to the development of novel solutions that push the boundaries of what is possible in the field.

Collaborations:

Throughout his career, Khojasteh has collaborated with esteemed colleagues such as Pushkara Rao Varanasi and Wu-Song S Huang. Together, they have spearheaded research initiatives and innovative projects that have garnered recognition and paved the way for future advancements in semiconductor technology.

Conclusion:

In conclusion, Mahmoud M Khojasteh's passion for innovation and his dedication to excellence have established him as a leading figure in the world of semiconductor technology. His diverse portfolio of patents and collaborations with industry experts underscore his remarkable contributions to shaping the landscape of modern technology. As a trailblazer in semiconductor innovation, Khojasteh's legacy continues to inspire and drive progress in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…