The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jul. 23, 2015
Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (dsa) patterning
International Business Machines Corporation, Armonk, NY (US);
Sebastian U. Engelmann, White Plains, NY (US);
Mahmoud Khojasteh, Poughkeepsie, NY (US);
Deborah A. Neumayer, Danbury, CT (US);
John Papalia, New York, NY (US);
Hsinyu Tsai, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A material stack is formed on the surface of a semiconductor substrate. The top layer of the material stack comprises at least an organic planarization layer. A neutral hard mask layer is formed on the top of the organic planarization layer. The neutral hard mask layer is neutral to the block copolymers used for direct self-assembly. A plurality of template etch stacks are then formed on top of the neutral hard mask layer. After formation of the template etch stacks, neutrality recovery is performed on the neutral hard mask layer and the top portions of the template etch stacks, the vertical sidewalls of the template etch stacks being substantially unaffected by the neutrality recovery. A template for DSA is thus obtained.