The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
May. 01, 2009
Leland Chang, New York, NY (US);
Wilfried E. Haensch, Somers, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Ghavam Shahidi, Pound Ridge, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
Leland Chang, New York, NY (US);
Wilfried E. Haensch, Somers, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Ghavam Shahidi, Pound Ridge, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A FINFET-containing structure having multiple FINs that are merged together without source/drain contact pads or a local interconnect is provided. The structure includes a plurality of semiconducting bodies (i.e., FINs) which extend above a surface of a substrate. A common patterned gate stack surrounds the plurality of semiconducting bodies and a nitride-containing spacer is located on sidewalls of the common patterned gate stack. An epitaxial semiconductor layer is used to merge each of the semiconducting bodies together.