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Yorktown Heights, NY, United States of America

Huiling Shang

This inventor holds 24 USPTO granted patents and 1 published patent application, primarily in Semiconductor Technology. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2003-2019.

USPTO Granted Patents = 24 (Patent Applications = 1)

% Patents Active = 58.3

Average Co-Inventor Count = 5.3

ph-index = 8

Forward Citations = 196(Granted Patents)

Location History:

Bethlehem, PA (US) (2003 - 2004)
Hopewell Junction, NY (US) (2012 - 2013)
Yorktown Heights, NY (US) (2006 - 2019)

Company Filing History:

22 out of 166,325

International Business Machines Corporation

Years Active: 2003-2019

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Areas of Expertise:

FinFET Structures

Strained Ge Integration

Low Power IC

High Threshold Voltage NMOS

Silicon-Germanium Fins

Shallow Trench Isolation

Source-Drain Extension

CMOS SOI

Contact Scheme

Passivation Treatment

MOS Device

Thin Germanium Oxynitride

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10242980 - Semiconductor fin isolation by a well trapping fin portion (2019-03-26),

2. 9536900 - Forming fins of different semiconductor materials on the same substrate (2017-01-03),

3. 9496258 - Semiconductor fin isolation by a well trapping fin portion (2016-11-15),

4. 9190520 - Strained finFET with an electrically isolated channel (2015-11-17),

5. 9029913 - Silicon-germanium fins and silicon fins on a bulk substrate (2015-05-12),

6. 8969969 - High threshold voltage NMOS transistors for low power IC technology (2015-03-03),

7. 8933528 - Semiconductor fin isolation by a well trapping fin portion (2015-01-13),

8. 8928086 - Strained finFET with an electrically isolated channel (2015-01-06),

9. 8927361 - High threshold voltage NMOS transistors for low power IC technology (2015-01-06),

10. 8685818 - Method of forming a shallow trench isolation embedded polysilicon resistor (2014-04-01),

11. 8592264 - Source-drain extension formation in replacement metal gate transistor device (2013-11-26),

12. 8558313 - Bulk substrate FET integrated on CMOS SOI (2013-10-15),

13. 8232599 - Bulk substrate FET integrated on CMOS SOI (2012-07-31),

14. 8154130 - Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby (2012-04-10),

15. 8080838 - Contact scheme for FINFET structures with multiple FINs (2011-12-20),

Title: The Innovative Journey of Huiling Shang

Introduction: Huiling Shang, a talented inventor based in Yorktown Heights, NY, has made significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Huiling Shang's latest patents include a cutting-edge artificial intelligence algorithm for predictive analytics and a revolutionary wearable device for monitoring health metrics in real-time.

Career Highlights: With a background in computer science and engineering, Huiling Shang has worked for top tech companies, leading research institutions, and universities, where she has spearheaded projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout her career, Huiling Shang has collaborated with renowned experts in the industry, patent attorneys, and fellow inventors to bring her ideas to life. Her ability to work in multidisciplinary teams has led to the successful development of innovative solutions to complex problems.

Conclusion: Huiling Shang's passion for innovation, coupled with her dedication to pushing the limits of technology, has solidified her reputation as a pioneering inventor in the field. Her relentless pursuit of excellence continues to inspire the next generation of inventors and researchers.

Profile summary based on public USPTO records.

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