The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
May. 22, 2014
Applicant:
Globalfoundries Inc., Grand Cayman OT, KY;
Inventors:
Ravikumar Ramachandran, Pleasantville, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
Keith Tabakman, Newburgh, NY (US);
Henry K. Utomo, Newburgh, NY (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman OT, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/845 (2013.01); H01L 29/1054 (2013.01);
Abstract
A method of manufacturing a semiconductor device, by etching a region of an SOI substrate so that only a portion of the original semiconductor is present above the insulator layer. After etching has occurred, a different semiconductor material is grown in the etched region, and fins are formed. An isolation layer is deposited to a height above that the base semiconductor of the etched region.