The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Sep. 09, 2014
International Business Machines Corporation, Armonk, NY (US);
Henry K. Utomo, Newburgh, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Dechao Guo, Fishkill, NY (US);
Myung-Hee Na, Lagrangeville, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Kern Rim, Yorktown Heights, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A fin structure includes an optional doped well, a disposable single crystalline semiconductor material portion, and a top semiconductor portion formed on a substrate. A disposable gate structure straddling the fin structure is formed, and end portions of the fin structure are removed to form end cavities. Doped semiconductor material portions are formed on sides of a stack of the disposable single crystalline semiconductor material portion and a channel region including the top semiconductor portion. The disposable single crystalline semiconductor material portion may be replaced with a dielectric material portion after removal of the disposable gate structure or after formation of the stack. The gate cavity is filled with a gate dielectric and a gate electrode. The channel region is stressed by the doped semiconductor material portions, and is electrically isolated from the substrate by the dielectric material portion.