Lagrangeville, NY, United States of America

Myung-Hee Na

This inventor holds 26 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Field-Effect Transistors. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2006-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Myung-Hee Na. Retrieved from https://idiyas.com/inventor/myung-hee-na

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 1)

% Patents Active = 76.9

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 118(Granted Patents)

Location History:

Essex Junction, VT (US) (2006)
Lagrangeville, NY (US) (2008 - 2021)

Company Filing History:

23 out of 166,325

International Business Machines Corporation

Years Active: 2006-2021

Loading Chart...

Areas of Expertise:

Field-Effect Transistors

Phase-Change Memory

CMOS

SRAM Cell Design

Gate Contacts

Carrier Mobility

FinFET

Threshold Voltage

Device Architecture

Electrical Test Data

Compact Model Parameters

Tunneling Leakage

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11101367 - Contact-first field-effect transistors (2021-08-24),

2. 10937961 - Structure and method to form bi-layer composite phase-change-memory cell (2021-03-02),

3. 10892331 - Channel orientation of CMOS gate-all-around field-effect transistor devices for enhanced carrier mobility (2021-01-12),

4. 10833267 - Structure and method to form phase change memory cell with self- align top electrode contact (2020-11-10),

5. 10803933 - Self-aligned high density and size adjustable phase change memory (2020-10-13),

6. 10693005 - Reliable gate contacts over active areas (2020-06-23),

7. 10614877 - 4T static random access memory bitcell retention (2020-04-07),

8. 10424576 - Standard cell architecture with at least one gate contact over an active area (2019-09-24),

9. 10424574 - Standard cell architecture with at least one gate contact over an active area (2019-09-24),

10. 10381480 - Reliable gate contacts over active areas (2019-08-13),

11. 10381338 - Metal fill optimization for self-aligned double patterning (2019-08-13),

12. 10381068 - Ultra dense and stable 4T SRAM cell design having NFETs and PFETs (2019-08-13),

13. 9735029 - Metal fill optimization for self-aligned double patterning (2017-08-15),

14. 9520391 - Field effect transistor having delay element with back gate (2016-12-13),

15. 9190520 - Strained finFET with an electrically isolated channel (2015-11-17),

Title: Myung-Hee Na: A Pioneer in Semiconductor Innovation

Introduction

Myung-Hee Na, based in Lagrangeville, NY, is a distinguished inventor with an impressive portfolio of 26 patents. His contributions to the field of semiconductor technology and phase-change memory cells have made significant impacts, showcasing his innovative spirit and technical expertise.

Latest Patents

Among his latest inventions are two notable patents. The first is for "Contact-first field-effect transistors," where he introduces a method for forming a device structure that involves creating a fin of a semiconductor material, along with a first and second contact spaced along the fin. The creation of a self-aligned gate electrode positioned between the two contacts enhances the efficiency of the device. The second patent focuses on the "Structure and method to form bi-layer composite phase-change-memory cell." This innovative PCM cell employs a unique method of layering germanium-antimony-tellurium (GST) type materials, presenting a cutting-edge approach to memory cell formation.

Career Highlights

Myung-Hee Na's career includes significant tenures at reputable companies, notably IBM and Globalfoundries Inc. His work at these pioneering firms has allowed him to develop groundbreaking technologies that emphasize his role as a leading inventor in the tech industry.

Collaborations

Throughout his career, Myung-Hee has collaborated with other renowned professionals, including Edward J. Nowak and Albert Manhee Chu. These partnerships have enabled the exchange of ideas and expertise, further advancing innovative solutions and technologies.

Conclusion

Myung-Hee Na's remarkable journey in the realm of inventions, particularly in semiconductors and memory technology, underscores his vital role in shaping the future of these fields. With his ongoing dedication to innovation and collaboration, Myung-Hee continues to be a formidable presence in the world of technology patents.

Profile summary based on public USPTO records.