The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Oct. 31, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Terence B. Hook, Jericho, VT (US);
Myung-Hee Na, Lagrangeville, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Andreas Scholze, Colchester, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/2254 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/4238 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method for forming a device structure provides for forming a fin of a semiconductor material. A first contact is formed on the fin. A second contact is formed on the fin and spaced along a length of the fin from the first contact. A self-aligned gate electrode is formed on the fin that is positioned along the length of the fin between the first contact and the second contact.