The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Mar. 11, 2013
International Business Machines Corporation, Armonk, NY (US);
Henry K. Utomo, Newburgh, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Myung-Hee Na, Lagrangeville, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A first silicon-germanium alloy layer is formed on a semiconductor substrate including silicon. A stack of a first silicon layer and a second silicon-germanium alloy layer is formed over a first region of the first silicon-germanium alloy layer, and a second silicon layer thicker than the first silicon layer is formed over a second region of the first silicon-germanium alloy layer. At least one first semiconductor fin is formed in the first region, and at least one second semiconductor fin is formed in the second region. Remaining portions of the first silicon layer are removed to provide at least one silicon-germanium alloy fin in the first region, while at least one silicon fin is provided in the second region. Fin field effect transistors can be formed on the at least one silicon-germanium alloy fin and the at least one silicon fin.