The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Sep. 22, 2011
Randy J. Koval, Boise, ID (US);
Max F. Hineman, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
Vinayak K. Shamanna, Boise, ID (US);
Thomas M. Graettinger, Boise, ID (US);
William R. Kueber, Boise, ID (US);
Christopher Larsen, Boise, ID (US);
Alex J. Schrinsky, Boise, ID (US);
Randy J. Koval, Boise, ID (US);
Max F. Hineman, Boise, ID (US);
Ronald A. Weimer, Boise, ID (US);
Vinayak K. Shamanna, Boise, ID (US);
Thomas M. Graettinger, Boise, ID (US);
William R. Kueber, Boise, ID (US);
Christopher Larsen, Boise, ID (US);
Alex J. Schrinsky, Boise, ID (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embodiments of the present disclosure are directed towards use of an etch process post wordline definition to improve data retention in a flash memory device. In one embodiment, a method includes forming a plurality of wordline structures on a substrate, wherein individual wordline structures of the plurality of wordline structures include a control gate having an electrically conductive material and a cap having an electrically insulative material formed on the control gate, depositing an electrically insulative material to form a liner on a surface of the individual wordline structures, and etching the liner to remove at least a portion of the liner. Other embodiments may be described and/or claimed.