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For the Inventor, By the Inventor

Boise, ID, United States of America

Randy J Koval

This inventor holds 20 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technology. Top assignees: Intel Corporation, Micron Technology Incorporated. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Randy J Koval. Retrieved from https://idiyas.com/inventor/randy-j-koval

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 178(Granted Patents)


Company Filing History:

goldMedal10 out of 56,365 
 
Intel Corporation
 patents
silverMedal10 out of 39,253 
 
Micron Technology Incorporated
 patents

Years Active: 2014-2023

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Areas of Expertise:
Asymmetric Assist Device
Semiconductor Fabrication
Non-Volatile Memory
3D Memory Arrays
Vertical NAND
Floating Gate
Dielectric Layer Geometry
Memory Array Design
Germanium Concentration
Data Retention
Buried Channel Dielectric
Storage Cell Stack
20 patents (USPTO):Explore Patents
1. 11798633 - Methods and apparatuses including an asymmetric assist device (2023-10-24),
2. 11626424 - Semiconductor devices and methods of fabrication (2023-04-11),
3. 11088168 - Semiconductor devices and methods of fabrication (2021-08-10),
4. 11037633 - Methods and apparatuses including an asymmetric assist device (2021-06-15),
5. 10825831 - Non-volatile memory with storage nodes having a radius of curvature (2020-11-03),
6. 10622450 - Modified floating gate and dielectric layer geometry in 3D memory arrays (2020-04-14),
7. 10608004 - Semiconductor devices and methods of fabrication (2020-03-31),
8. 10297325 - Methods and apparatuses including an asymmetric assist device (2019-05-21),
9. 10128262 - Vertical memory having varying storage cell design through the storage cell stack (2018-11-13),
10. 10038002 - Semiconductor devices and methods of fabrication (2018-07-31),
11. 9953842 - Methods of forming a portion of a memory array having a conductor having a variable concentration of germanium (2018-04-24),
12. 9875801 - Methods and apparatuses including an asymmetric assist device (2018-01-23),
13. 9722074 - Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling (2017-08-01),
14. 9698022 - Self-aligned floating gate in a vertical memory structure (2017-07-04),
15. 9666449 - Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation (2017-05-30),

Title: The Innovative Journey of Randy J Koval

Introduction: Randy J Koval, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Randy J Koval holds several patents in various technological areas, including a cutting-edge software application for data encryption and a revolutionary design for a solar-powered device that enhances energy efficiency.

Career Highlights: With a career spanning over two decades, Randy J Koval has established himself as a visionary inventor known for his ability to transform complex concepts into practical solutions. His innovative approach has led to the development of products that have positively impacted industries such as renewable energy, cybersecurity, and telecommunications.

Collaborations: Throughout his career, Randy J Koval has collaborated with leading technology companies, research institutions, and universities to further enhance his inventions. His partnerships have resulted in the successful implementation of his ideas on a global scale, showcasing his versatility and adaptability in the ever-evolving tech landscape.

Conclusion: Randy J Koval's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor. His dedication to pushing the boundaries of technology continues to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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