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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10825831 B1

PDFFull Text
Date of Patent:
Nov. 03, 2020

Filed:

Jun. 28, 2019

Non-volatile memory with storage nodes having a radius of curvature

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Randy J. Koval, Boise, ID (US);

Henok T. Mebrahtu, Meridian, ID (US);

Krishna K. Parat, Palo Alto, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Compass IP Law, PC

Primary Examiner:

Caleen O Sullivan

Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); H01L 27/11582 (2017.01); H01L 29/423 (2006.01); H01L 27/11556 (2017.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/02636 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 27/11556 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01);
Abstract

Storage node configurations are described. A storage node (e.g., a floating gate or a charge trap layer of a three-dimensional (3D) NAND flash device) include a channel-facing surface with a radius of curvature. For example, a channel-facing surface of the storage node may be concave. A control gate-facing surface of the storage node may instead, or additionally, also include a radius of curvature. The radius of curvature of the channel-facing and/or control gate-facing surfaces of the storage node is less than or equal to the radius of the channel layer.

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