The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jul. 12, 2016
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventor:
Randy J. Koval, Boise, ID (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 29/788 (2006.01); G11C 16/04 (2006.01); H01L 27/11556 (2017.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 27/11519 (2017.01); H01L 27/11521 (2017.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); G11C 16/0408 (2013.01); H01L 21/0217 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 29/04 (2013.01); H01L 29/1033 (2013.01); H01L 29/16 (2013.01); H01L 29/4916 (2013.01); H01L 29/7827 (2013.01); H01L 29/7883 (2013.01); H01L 29/7889 (2013.01); G11C 2213/71 (2013.01);
Abstract
Methods for building a memory device or electronic system may include a memory cell body extending from a substrate, a self-aligned floating gate separated from the memory cell body by a tunneling dielectric film, and a control gate separated from the self-aligned floating gate by a blocking dielectric film. The floating gate is flanked by the memory cell body and the control gate to form a memory cell, and the self-aligned floating gate is at least as thick as the control gate.