The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Sep. 09, 2022
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

Justin D. Shepherdson, Meridian, ID (US);

Collin Howder, Meridian, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02532 (2013.01); H01L 21/28518 (2013.01); H01L 21/31111 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08); H01L 29/66545 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract

Some embodiments include methods of forming integrated assemblies. A conductive structure is formed to include a semiconductor-containing material over a metal-containing material. An opening is formed to extend into the conductive structure. A conductive material is formed along a bottom of the opening. A stack of alternating first and second materials is formed over the conductive structure either before or after forming the conductive material. Insulative material and/or channel material is formed to extend through the stack to contact the conductive material. Some embodiments include integrated assemblies.


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