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For the Inventor, By the Inventor

Meridian, ID, United States of America

Collin Howder

USPTO Granted Patents = 49 

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 126(Granted Patents)


Location History:

  • Meridian, ID (US) (2019 - 2024)
  • Boise, ID (US) (2022 - 2024)

Company Filing History:

goldMedal44 out of 37,905 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2019-2025

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49 patents (USPTO):
1. 12482752 - Memory circuitry and method used in forming memory circuitry (2025-11-25),
2. 12424282 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-09-23),
3. 12419048 - Memory circuitry and method used in forming memory circuitry (2025-09-16),
4. 12408341 - Memory arrays, and methods of forming memory arrays (2025-09-02),
5. 12406932 - Memory circuitry and method used in forming memory circuitry (2025-09-02),
6. 12396172 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-08-19),
7. 12356619 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-07-08),
8. 12356617 - Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systems (2025-07-08),
9. 12230325 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2025-02-18),
10. 12200929 - Integrated circuitry comprising a memory array comprising strings of memory cells and method used in forming a memory array comprising strings of memory cells (2025-01-14),
11. 12185545 - Memory arrays and methods used in forming a memory array comprising strings of memory cells (2024-12-31),
12. 12167600 - Integrated assemblies, and methods of forming integrated assemblies (2024-12-10),
13. 12137564 - Methods of forming microelectronic devices (2024-11-05),
14. 12063782 - Integrated assemblies having metal-containing liners along bottoms of trenches, and methods of forming integrated assemblies (2024-08-13),
15. 12040253 - Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells (2024-07-16),

Title: Innovation Through Memory: The Patents of Collin Howder

Introduction

Collin Howder, an inventive mind located in Meridian, ID, has made significant contributions to the field of memory technology with an impressive portfolio of 41 patents. His work at Micron Technology has propelled advancements in memory arrays and integrated circuitry, showcasing his dedication to innovation in electronics.

Latest Patents

His latest patents include innovations related to memory arrays and methods for forming those arrays. One such patent describes a method for constructing a memory array comprising strings of memory cells. This method involves creating a stack that features vertically-alternating tiers, each composed of distinct materials, thereby enhancing the efficiency of memory blocks. The integration of channel-material strings that extend through the stack exemplifies his commitment to advancing memory technology. Another recent patent focuses on integrated circuitry that comprises laterally-spaced memory blocks, which utilize vertically-alternating tiers of insulative and conductive materials to improve electrical coupling.

Career Highlights

Throughout his career, Collin Howder has consistently demonstrated expertise in memory technologies at Micron Technology Incorporated. His innovative approach to developing memory arrays has not only garnered multiple patents but also significantly advanced the capabilities of modern memory systems in consumer electronics.

Collaborations

Collin has worked closely with several talented individuals, including Chet E. Carter and Jordan D. Greenlee. Together, they have contributed to the collective intelligence at Micron Technology, pushing the boundaries of what is possible in memory technology.

Conclusion

Collin Howder's work exemplifies the essence of innovation in memory technologies. With a robust portfolio of patents and collaborations with fellow experts, he continues to pave the way for advancements that impact the electronics industry, making significant strides in the development of cutting-edge memory solutions. His contributions at Micron Technology showcase his ingenuity and commitment to enhancing the future of memory technology.

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