The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11056391 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 06, 2021

Filed:

Jun. 30, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hari V. Mallela, Poughquag, NY (US);

Robert Russell Robison, Colchester, VT (US);

Reinaldo Ariel Vega, Mahopac, NY (US);

Rajasekhar Venigalla, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823412 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01); H01L 29/41741 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/78642 (2013.01);
Abstract

A method and a semiconductor device includes a substrate, and a first device type formed on the substrate, the first device type including an active channel region including a first fin, the first fin including a first fin width which is narrower than a second fin width above and below the active channel region. A second device type can be formed on the same substrate, the second device type includes a second active channel region including a second fin, the second fin including a first fin width which is the same as the second fin width both above and below the second active channel region.


Find Patent Forward Citations

Mallela, Hari. (2021). Subtractive vfet process flow with replacement metal gate and metallic source/drain (U.S. Patent No. 11056391). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11056391

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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