The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Mar. 28, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Reinaldo Vega, Mahopac, NY (US);

Takashi Ando, Tuckahoe, NY (US);

Hari Mallela, Poughquag, NY (US);

Li-Wen Hung, Mahopac, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); H01L 45/1608 (2013.01); H01L 45/1683 (2013.01); G11C 13/0011 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/11 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01); H01L 45/08 (2013.01);
Abstract

A stacked resistive random access memory (ReRAM) structure is provided. The stacked ReRAM structure includes a channel, a ReRAM cell sub-structure and a contact via sub-structure. The ReRAM cell structure includes ReRAM cell, drain, gate and source layers, which are insulated from one another and respectively disposed in operative contact with the channel. The contact via sub-structures includes first, second, third and fourth contact vias, which are separate from one another. The first contact via is disposed in exclusive operative contact with the ReRAM cell layer. The second contact via is disposed in exclusive operative contact with the drain layer. The third contact via is disposed in exclusive operative contact with the gate layer. The fourth contact via is disposed in exclusive operative contact with the source layer.


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