The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Mar. 03, 2011
Emre Alptekin, Wappingers Falls, NY (US);
Sameer Hemchand Jain, Beacon, NY (US);
Reinaldo Ariel Vega, Wappingers Falls, NY (US);
Emre Alptekin, Wappingers Falls, NY (US);
Sameer Hemchand Jain, Beacon, NY (US);
Reinaldo Ariel Vega, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An aspect of the invention includes a method for forming a semiconductor device with a two-step silicide formation. First, a silicide intermix layer is formed over a source/drain region and a portion of an adjacent extension region. Any spacers removed to accomplish this may be replaced. Dielectric material covers the silicide intermix layer over the source/drain region. A contact opening for a via is etched into the dielectric material. A second silicide contact is formed on the silicide intermix layer, or may be formed within the source/drain region as long as the second silicide contact still contacts the silicide intermix layer.