The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Apr. 16, 2019
International Business Machines Corporation, Armonk, NY (US);
Raghuveer Reddy Patlolla, Guilderland, NY (US);
Hari Prasad Amanapu, Guilderland, NY (US);
Vimal Kamineni, Mechanicville, NY (US);
Sugirtha Krishnamurthy, Manassas, VA (US);
Viraj Yashawant Sardesai, Clifton Park, NY (US);
Cornelius Brown Peethala, Slingerlands, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Embodiments of the invention describe a method of forming an integrated circuit. The method includes forming an active semiconductor device region over a substrate. A first contact structure is formed over the active semiconductor device region, wherein the first contact structure includes a first contact liner material and a first contact body material. A conductive gate structure is formed over the active semiconductor device region, and a first gate cap material is formed on the conductive gate structure. The first contact liner material includes a first etch selectivity responsive to a first etch composition, the first contact body material includes a second etch selectivity responsive to the first etch composition, and the first gate cap material includes a third etch selectivity responsive to the first etch composition. The first etch selectivity is greater than each of the second and third etch selectivies.