The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Dec. 04, 2014
Globalfoundries Inc., Grand Cayman, KY;
Xusheng Wu, Ballston Lake, NY (US);
Yue Hu, Mechanicville, NY (US);
Xin Wang, Clifton Park, NY (US);
Yong Meng Lee, Mechanicville, NY (US);
Wen-Pin Peng, Clifton Park, NY (US);
Lun Zhao, Ballston Lake, NY (US);
Wei-Hua Tong, Mechanicville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods for forming a trench silicide without gouging the silicon source/drain regions and the resulting devices are disclosed. Embodiments include forming first and second dummy gates, each with spacers at opposite sides thereof, on a substrate; forming eSiGe source/drain regions at opposite sides of the first dummy gate; forming raised source/drain regions at opposite sides of the second dummy gate; forming a silicon cap on each of the eSiGe and raised source/drain regions; forming an ILD over and between the first and second dummy gates; replacing the first and second dummy gates with first and second HKMG, respectively; forming a contact trench through the ILD into the silicon cap over each of the eSiGe and raised source/drain regions; and forming a silicide over the eSiGe and raised source/drain regions.