IDiyas

For the Inventor, By the Inventor

Ballston Lake, NY, United States of America

Lun Zhao

USPTO Granted Patents = 8 

Average Co-Inventor Count = 5.5

ph-index = 3

Forward Citations = 87(Granted Patents)


Location History:

  • Ballston Lake, NY (US) (2014 - 2017)
  • Ballston Spa, NY (US) (2017)

Company Filing History:

goldMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2014-2017

where 'Filed Patents' based on already Granted Patents

8 patents (USPTO):
1. 9607989 - Forming self-aligned NiSi placement with improved performance and yield (2017-03-28),
2. 9570586 - Fabrication methods facilitating integration of different device architectures (2017-02-14),
3. 9455198 - Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices (2016-09-27),
4. 9324713 - Eliminating field oxide loss prior to FinFET source/drain epitaxial growth (2016-04-26),
5. 9147696 - Devices and methods of forming finFETs with self aligned fin formation (2015-09-29),
6. 9093561 - Modified, etch-resistant gate structure(s) facilitating circuit fabrication (2015-07-28),
7. 9024368 - Fin-type transistor structures with extended embedded stress elements and fabrication methods (2015-05-05),
8. 8815699 - Fabrication of reverse shallow trench isolation structures with super-steep retrograde wells (2014-08-26),

Title: Innovations of Lun Zhao

Introduction

Lun Zhao is a prominent inventor based in Ballston Lake, NY (US), known for his significant contributions to the field of semiconductor technology. With a total of 8 patents to his name, Zhao has made remarkable advancements that enhance device performance and fabrication methods.

Latest Patents

Among his latest patents, Zhao has developed methods for forming self-aligned NiSi placement with improved performance and yield. This innovation includes techniques for forming a trench silicide without gouging the silicon source/drain regions. The process involves creating first and second dummy gates on a substrate, forming eSiGe source/drain regions, and integrating raised source/drain regions, ultimately leading to enhanced device efficiency. Another notable patent focuses on fabrication methods that facilitate the integration of different device architectures. This includes the formation of U-shaped cavities in a substrate structure, which allows for the creation of circuit structures with transistors that exhibit varying mobility characteristics.

Career Highlights

Lun Zhao is currently employed at Globalfoundries Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing innovative solutions that address the challenges faced in circuit fabrication and device performance.

Collaborations

Zhao collaborates with talented individuals in his field, including Hong Yu and Richard J Carter. These partnerships enhance the creative process and lead to groundbreaking advancements in technology.

Conclusion

Lun Zhao's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative methods and dedication to improving device performance continue to shape the future of technology.

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