The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Nov. 14, 2013
Globalfoundries Inc., Grand Cayman, KY;
Hong Yu, Rexford, NY (US);
Hyucksoo Yang, Watervliet, NY (US);
Bingwu Liu, Ballston Spa, NY (US);
Puneet Khanna, Clifton Park, NY (US);
Lun Zhao, Ballston Lake, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Fin-type transistor fabrication methods and structures are provided having extended embedded stress elements. The methods include, for example: providing a gate structure extending over a fin extending above a substrate; using isotropic etching and anisotropic etching to form an extended cavity within the fin, where the extended cavity in part undercuts the gate structure, and where the using of the isotropic etching and the anisotropic etching deepens the extended cavity into the fin below the undercut gate structure; and forming an embedded stress element at least partially within the extended cavity, including below the gate structure.