Watervliet, NY, United States of America

Hyucksoo Yang

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 19(Granted Patents)


Location History:

  • Watervliet, NY (US) (2015 - 2016)
  • Saratoga Springs, NY (US) (2016)

Company Filing History:


Years Active: 2015-2016

where 'Filed Patents' based on already Granted Patents

4 patents (USPTO):

Title: **The Innovative Contributions of Hyucksoo Yang**

Introduction

Hyucksoo Yang, based in Watervliet, NY, is a distinguished inventor with a remarkable portfolio of four patents. His work primarily focuses on advancements in FinFET technology, a critical area in modern semiconductor manufacturing.

Latest Patents

One of Yang's notable patents is for a method called "FinFET spacer etch for eSiGe improvement." This innovative technique involves etching FinFET spacers by inserting a silicon recess step right after the conventional spacer ME step. The patent details the formation of a gate on a substrate featuring a silicon fin, emphasizing the creation of a nitride cap and oxide cap, along with a series of precise steps to effectively recess the silicon fin while safeguarding its integrity.

Another significant patent addresses "Methods for preventing oxidation damage during FinFET fabrication." This invention introduces improved approaches for creating finFETs, utilizing stressor regions to enhance carrier mobility. However, the subsequent processes, like flowable oxide deposition and annealing, can harm these stressor regions. Yang's patent proposes the introduction of a protective layer of silicon or silicon oxide to shield the stressor areas during these critical fabrication steps.

Career Highlights

Hyucksoo Yang is currently associated with GlobalFoundries Inc., where he continues to shape the landscape of semiconductor technology. His dedication to innovation in the industry has not only earned him multiple patents but has also positioned him as a key contributor to cutting-edge research and development.

Collaborations

Throughout his career, Yang has collaborated with notable professionals, including Hong Yu and Puneet Khanna. Together, they have worked on various projects that aim to enhance semiconductor fabrication processes and improve device performance.

Conclusion

Hyucksoo Yang's contributions to the field of semiconductor technology are noteworthy and reflect his commitment to innovation. With multiple patents to his name, his work continues to impact the industry significantly, paving the way for future advancements in FinFET technology.

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