The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 09, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hong Yu, Rexford, NY (US);
Hyucksoo Yang, Saratoga Springs, NY (US);
Huang Liu, Mechanicville, NY (US);
Richard J. Carter, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/336 (2006.01); H01L 29/76 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/6653 (2013.01);
Abstract
Embodiments of the present invention provide improved methods for fabricating field effect transistors such as finFETs. Stressor regions are used to increase carrier mobility. However, subsequent processes such as deposition of flowable oxide and annealing can damage the stressor regions, diminishing the amount of stress that is induced. Embodiments of the present invention provide a protective layer of silicon or silicon oxide over the stressor regions prior to the flowable oxide deposition and anneal.