The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Nov. 06, 2009
Yong Meng Lee, Singapore, SG;
Young Way Teh, Singapore, SG;
Chung Woh Lai, Singapore, SG;
Wenhe Lin, Singapore, SG;
Khee Yong Lim, Singapore, SG;
Wee Leng Tan, Singapore, SG;
Hui Peng Koh, Singapore, SG;
John Sudijono, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Yong Meng Lee, Singapore, SG;
Young Way Teh, Singapore, SG;
Chung Woh Lai, Singapore, SG;
Wenhe Lin, Singapore, SG;
Khee Yong Lim, Singapore, SG;
Wee Leng Tan, Singapore, SG;
Hui Peng Koh, Singapore, SG;
John Sudijono, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A first example embodiment provides a method of removing first spacers from gates and incorporating a low-k material into the ILD layer to increase device performance. A second example embodiment comprises replacing the first spacers after silicidation with low-k spacers. This serves to reduce the parasitic capacitances. Also, by implementing the low-k spacers only after silicidation, the embodiments' low-k spacers are not compromised by multiple high dose ion implantations and resist strip steps. The example embodiments can improve device performance, such as the performance of a rim oscillator.