The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Jan. 14, 2010
Xiangdong Chen, Poughquag, NY (US);
Weipeng LI, Hopewell Junction, NY (US);
Anda C. Mocuta, Hopewell Junction, NY (US);
Dae-gyu Park, Hopewell Junction, NY (US);
Melanie J. Sherony, Hopewell Junction, NY (US);
Kenneth J. Stein, Hopewell Junction, NY (US);
Haizhou Yin, Hopewell Junction, NY (US);
Franck Arnaud, Hopewell Junction, NY (US);
Jin-ping Han, Fishkill, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Yong Meng Lee, Woodlands, SG;
Young Way Teh, Singapore, SG;
Voon-yew Thean, Fishkill, NY (US);
Da Zhang, Hopewell Junction, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Weipeng Li, Hopewell Junction, NY (US);
Anda C. Mocuta, Hopewell Junction, NY (US);
Dae-Gyu Park, Hopewell Junction, NY (US);
Melanie J. Sherony, Hopewell Junction, NY (US);
Kenneth J. Stein, Hopewell Junction, NY (US);
Haizhou Yin, Hopewell Junction, NY (US);
Franck Arnaud, Hopewell Junction, NY (US);
Jin-Ping Han, Fishkill, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Yong Meng Lee, Woodlands, SG;
Young Way Teh, Singapore, SG;
Voon-Yew Thean, Fishkill, NY (US);
Da Zhang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Infineon Technologies North America Corp., Milptas, CA (US);
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
An integrated circuit structure includes a substrate and at least one pair of complementary transistors on or in the substrate. The pair of complementary transistors comprises a first transistor and a second transistor. The structure also includes a first stress-producing layer on the first transistor and the second transistor, and a second stress-producing layer on the first stress-producing layer over the first transistor and the second transistor. The first stress-producing layer applies tensile strain force on the first transistor and the second transistor. The second stress-producing layer applies compressive strain force on the first stress-producing layer, the first transistor, and the second transistor.