Average Co-Inventor Count = 4.7

ph-index = 12

Forward Citations = 686(Granted Patents)

Location History:

Wappinger Falls, NY (US) (2001)
Wappingers Falls, NY (US) (2003)
Hopewell Junction, NY (US) (2012 - 2014)
LaGrangeville, NY (US) (2003 - 2017)

Company Filing History:

25 out of 164,108

International Business Machines Corporation

patents

2 out of 672

Mentor Graphics Corporation

Freescale Semiconductor,inc.

patents

5. 1 out of 244

Infineon Technologies North America Corp.

patents

6. 1 out of 962

Chartered Semiconductor Manufacturing Ltd (corporation)

patents

where one patent can have more than one assignee

Years Active: 2001-2017

where 'Filed Patents' based on already Granted Patents

28 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9639652 - Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors (2017-05-02),

2. 8997028 - Methods and system for analysis and management of parametric yield (2015-03-31),

3. 8754412 - Intra die variation monitor using through-silicon via (2014-06-17),

4. 8626480 - Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors (2014-01-07),

5. 8429576 - Methods and system for analysis and management of parametric yield (2013-04-23),

6. 8239790 - Methods and system for analysis and management of parametric yield (2012-08-07),

7. 8168971 - Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain (2012-05-01),

8. 8106462 - Balancing NFET and PFET performance using straining layers (2012-01-31),

9. 8042070 - Methods and system for analysis and management of parametric yield (2011-10-18),

10. 7928513 - Protection against charging damage in hybrid orientation transistors (2011-04-19),

11. 7879650 - Method of providing protection against charging damage in hybrid orientation transistors (2011-02-01),

12. 7723750 - MOSFET with super-steep retrograded island (2010-05-25),

13. 7705345 - High performance strained silicon FinFETs device and method for forming same (2010-04-27),

14. 7691698 - Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain (2010-04-06),

15. 7655557 - CMOS silicide metal gate integration (2010-02-02),

Title: The Innovative Mind of Anda C Mocuta

Introduction: Anda C Mocuta, a talented inventor hailing from Lagrangeville, NY, is known for his groundbreaking contributions to the world of innovation.

Latest Patents: Anda C Mocuta has recently been granted several patents for his cutting-edge inventions in the fields of technology and engineering, showcasing his continuous dedication to pushing the boundaries of what is possible.

Career Highlights: Throughout his illustrious career, Anda C Mocuta has demonstrated a remarkable ability to transform creative ideas into tangible solutions that have the potential to revolutionize industries. His passion for innovation has led to the development of numerous products that have significantly impacted the way we live and work.

Collaborations: Anda C Mocuta has collaborated with leading experts in various fields, leveraging their collective knowledge and expertise to bring his inventions to life. His collaborative spirit and open-minded approach have been instrumental in his success as an inventor.

Conclusion: In conclusion, Anda C Mocuta stands as a shining example of an inventor whose relentless pursuit of innovation has resulted in transformative contributions to society. His work continues to inspire future generations of inventors to think boldly and push the boundaries of what is possible in the world of technology and beyond.

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