The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Jan. 07, 2004
Stephen W. Bedell, Wappingers Falls, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Silke H. Christianson, Halle, DE;
Jack O. Chu, Manhasset Hills, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Kam-leung Lee, Putnam Valley, NY (US);
Anda C. Mocuta, Lagrangeville, NY (US);
John A. Ott, Greenwood Lake, NY (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Silke H. Christianson, Halle, DE;
Jack O. Chu, Manhasset Hills, NY (US);
Anthony G. Domenicucci, New Paltz, NY (US);
Kam-Leung Lee, Putnam Valley, NY (US);
Anda C. Mocuta, Lagrangeville, NY (US);
John A. Ott, Greenwood Lake, NY (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.