Halle, Germany

Silke H Christianson

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Silke H Christianson. Retrieved from https://idiyas.com/inventor/silke-h-christianson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 46(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Silke H Christianson: Innovator in FinFET Technology

Introduction

Silke H Christianson is a prominent inventor based in Halle, Germany. She has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor structures. Her work has implications for improving the performance of electronic devices.

Latest Patents

Silke holds a patent for a "High performance strained silicon FinFETs device and method for forming same." This invention involves a strained Fin Field Effect Transistor (FinFET) that includes a relaxed first material with a sidewall, and a strained second material formed on the sidewall of the first material. The combination of these materials forms a fin of the FinFET, enhancing its performance characteristics. She has 1 patent to her name.

Career Highlights

Silke is currently employed at International Business Machines Corporation, commonly known as IBM. Her role at IBM allows her to work on cutting-edge technologies that drive innovation in the semiconductor industry.

Collaborations

Throughout her career, Silke has collaborated with notable colleagues, including Stephen W Bedell and Kevin K Chan. These partnerships have contributed to her success and the advancement of her research.

Conclusion

Silke H Christianson is a trailblazer in the field of FinFET technology, with her innovative patent showcasing her expertise and dedication to advancing semiconductor technology. Her contributions continue to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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