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For the Inventor, By the Inventor

Voon-Yew Thean

Austin, TX, United States of America

Voon-Yew Thean

LinkedIn
USPTO Granted Patents = 51 


Average Co-Inventor Count = 4.2

ph-index = 13

Forward Citations = 572(Granted Patents)

Forward Citations (Not Self Cited) = 560(Dec 10, 2025)


Location History:

  • Austin, TX (US) (2005 - 2011)
  • Fishkill, NY (US) (2010 - 2013)
  • Hopewell Junction, NY (US) (2014)

Company Filing History:

goldMedal47 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal4 out of 164,197 
 
International Business Machines Corporation
 patents
bronzeMedal2 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
6. 1 out of 244 
 
Infineon Technologies North America Corp.
 patents
7. 1 out of 832,843 
Other
 patents
where one patent can have more than one assignee

Years Active: 2005-2014

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Areas of Expertise:
Semiconductor Devices
Strained Silicon
Transistor Fabrication
CMOS Technology
Gate Work Function
Integrated Circuits
High-K Dielectric
FINFET Structures
Optical Devices
Stress Engineering
Dual Strained Channels
Asymmetric Spacers
51 patents (USPTO):Explore Patents
1. 8623714 - Spacer protection and electrical connection for array device (2014-01-07),
2. 8587039 - Method of forming a semiconductor device featuring a gate stressor and semiconductor device (2013-11-19),
3. 8563394 - Integrated circuit structure having substantially planar N-P step height and methods of forming (2013-10-22),
4. 8106462 - Balancing NFET and PFET performance using straining layers (2012-01-31),
5. 8039341 - Selective uniaxial stress modification for use with strained silicon on insulator integrated circuit (2011-10-18),
6. 8003454 - CMOS process with optimized PMOS and NMOS transistor devices (2011-08-23),
7. 7960243 - Method of forming a semiconductor device featuring a gate stressor and semiconductor device (2011-06-14),
8. 7911002 - Semiconductor device with selectively modulated gate work function (2011-03-22),
9. 7883953 - Method for transistor fabrication with optimized performance (2011-02-08),
10. 7867839 - Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors (2011-01-11),
11. 7821067 - Electronic devices including a semiconductor layer (2010-10-26),
12. 7811382 - Method for forming a semiconductor structure having a strained silicon layer (2010-10-12),
13. 7803670 - Twisted dual-substrate orientation (DSO) substrates (2010-09-28),
14. 7781840 - Semiconductor device structure (2010-08-24),
15. 7781839 - Structure and method for strained transistor directly on insulator (2010-08-24),

Title: The Innovative Journey of Voon-Yew Thean

Introduction: Voon-Yew Thean, a pioneering inventor based in Austin, TX, has made significant contributions to the field of technology with her groundbreaking innovations.

Latest Patents: Voon-Yew Thean holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing her diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Voon-Yew Thean has led successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout her career, Voon-Yew Thean has collaborated with leading research institutions, universities, and tech companies to bring her ideas to life and create impactful solutions.

Conclusion: Voon-Yew Thean's dedication to innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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