The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2010
Filed:
Mar. 30, 2007
Applicants:
Voon-yew Thean, Austin, TX (US);
Bich-yen Nguyen, Austin, TX (US);
Inventors:
Voon-Yew Thean, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device () comprising a substrate () and an oxide layer () formed over the substrate is provided. The semiconductor device further includes a first semiconductor layer () having a first lattice constant formed directly over the oxide layer. The semiconductor device further includes a second semiconductor layer () having a second lattice constant formed directly over the first semiconductor layer, wherein the second lattice constant is different from the first lattice constant.