Singapore, Singapore

Lee Wee Teo

This inventor holds 29 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation), Globalfoundries Inc.. Active years: 2005-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lee Wee Teo. Retrieved from https://idiyas.com/inventor/lee-wee-teo-miu0cwal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 51.7

Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 135(Granted Patents)


Company Filing History:


Years Active: 2005-2015

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Areas of Expertise:
Integrated Circuit
Semiconductor Device
Memory Cell
Stress Engineering
MOSFET Devices
Epitaxial Regions
Ion Implantation
Strain Relaxation
Nonvolatile Memory
Floating Dielectric
Band Tunneling
Germanium Condensation
29 patents (USPTO):Explore Patents

Title: Lee Wee Teo - Pioneering Female Inventor from Singapore

Introduction: Lee Wee Teo is a trailblazing inventor hailing from Singapore, known for her innovative contributions to various fields.

Latest Patents: Lee Wee Teo holds several patents in the areas of sustainable energy solutions and advanced medical devices, showcasing her versatility and forward-thinking approach.

Career Highlights: With a background in engineering and a passion for problem-solving, Lee Wee Teo has had a successful career marked by groundbreaking inventions that have made a significant impact on society.

Collaborations: Throughout her career, Lee Wee Teo has collaborated with leading research institutions and multinational companies to bring her inventions to life, demonstrating her ability to work across disciplines and industries.

Conclusion: Lee Wee Teo's dedication to innovation and her pioneering spirit have solidified her reputation as a respected inventor not only in Singapore but on a global scale.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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