The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2011

Filed:

May. 31, 2010
Applicants:

Lee Wee Teo, Singapore, SG;

Shiang Yang Ong, Singapore, SG;

Jae Gon Lee, Singapore, SG;

Vincent Leong, Singapore, SG;

Elgin Quek, Singapore, SG;

Dong Kyun Sohn, Singapore, SG;

Inventors:

Lee Wee Teo, Singapore, SG;

Shiang Yang Ong, Singapore, SG;

Jae Gon Lee, Singapore, SG;

Vincent Leong, Singapore, SG;

Elgin Quek, Singapore, SG;

Dong Kyun Sohn, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first example embodiment comprises the following steps and the structure formed therefrom. A trench having opposing sidewalls is formed within a substrate. A stress layer having an inherent stress is formed over the opposing trench sidewalls. The stress layer having stress layer sidewalls over the trench sidewalls. Ions are implanted into one or more portions of the stress layer to form ion-implanted relaxed portions with the portions of the stress layer that are not implanted are un-implanted portions, whereby the inherent stress of the one or more ion-implanted relaxed portions of stress layer portions is relaxed.


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