IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Shiang Yang Ong

USPTO Granted Patents = 22 

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 177(Granted Patents)


Location History:

  • Dresden, DE (2013 - 2015)
  • Singapore, SG (2006 - 2024)

Company Filing History:

goldMedal16 out of 1,016 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal4 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
bronzeMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2006-2024

where 'Filed Patents' based on already Granted Patents

22 patents (USPTO):
1. 12136649 - Deep trench isolation structures with a substrate connection (2024-11-05),
2. 11908930 - Laterally-diffused metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer (2024-02-20),
3. 10529819 - High voltage Schottky diode and manufacturing method thereof (2020-01-07),
4. 10510831 - Low on resistance high voltage metal oxide semiconductor transistor (2019-12-17),
5. 10504768 - Contact structures to deep trench isolation structures and method of nanufacturing the same (2019-12-10),
6. 9831304 - Integrated circuits with deep trench isolations and methods for producing the same (2017-11-28),
7. 9673084 - Isolation scheme for high voltage device (2017-06-06),
8. 8999803 - Methods for fabricating integrated circuits with the implantation of fluorine (2015-04-07),
9. 8975708 - Semiconductor device with reduced contact resistance and method of manufacturing thereof (2015-03-10),
10. 8975704 - Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations (2015-03-10),
11. 8936977 - Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations (2015-01-20),
12. 8916430 - Methods for fabricating integrated circuits with the implantation of nitrogen (2014-12-23),
13. 8828834 - Methods of tailoring work function of semiconductor devices with high-k/metal layer gate structures by performing a fluorine implant process (2014-09-09),
14. 8703578 - Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations (2014-04-22),
15. 8470700 - Semiconductor device with reduced contact resistance and method of manufacturing thereof (2013-06-25),

Title: Innovations of Inventor Shiang Yang Ong

Introduction: Shiang Yang Ong is a distinguished inventor based in Singapore, holding an impressive portfolio of 22 patents. His innovative contributions primarily focus on semiconductor structures, showcasing his deep expertise in this vital field of technology.

Latest Patents: Among his latest patented inventions are groundbreaking technologies in deep trench isolation structures and laterally-diffused metal-oxide-semiconductor devices. One patent emphasizes semiconductors having deep trench isolation structures that include multiple portions and a conductor layer, enabling better isolation and performance of the semiconductor substrate. Another significant invention is a structure for laterally-diffused metal-oxide-semiconductor devices that incorporates a multiple-thickness buffer dielectric layer, enhancing device efficiency and functionality.

Career Highlights: Shiang Yang Ong has made significant strides in his career, working with prominent technology firms such as Globalfoundries Singapore Pte. Ltd. and Chartered Semiconductor Manufacturing Ltd. His contributions have not only advanced the field of semiconductor technology but have also established him as a leader and innovator within the industry.

Collaborations: Throughout his career, Ong has collaborated with a talented group of peers, including Namchil Mun and Jan Hoentschel. These partnerships have enriched his work and helped foster a culture of innovation in the companies he has been affiliated with.

Conclusion: With 22 patents to his name and a strong track record in semiconductor technology, Shiang Yang Ong continues to inspire future innovations. His work exemplifies the critical role inventors play in the advancement of technology, paving the way for new developments and improvements in semiconductor structures.

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