The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2020

Filed:

Nov. 04, 2017
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Namchil Mun, Singapore, SG;

Shiang Yang Ong, Singapore, SG;

Jeoung Mo Koo, Singapore, SG;

Raj Verma Purakh, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66143 (2013.01); H01L 29/0619 (2013.01); H01L 29/872 (2013.01); H01L 29/402 (2013.01);
Abstract

The present invention discloses a Schottky diode. The Schottky diode comprises a substrate having a device well. A drift region is disposed within the device well. A guard ring region is disposed within the device well and adjacent to the drift region. A field isolation region and a dielectric film are disposed on a top substrate surface. The dielectric film is aligned to the field isolation region. A field plate is disposed over the field isolation region and the dielectric film. The field plate completely covers a top surface of the dielectric film and partially overlaps the guard ring region. A conductive contact layer is disposed adjacent to the dielectric film. The conductive contact layer contacts a portion of the device well to define a Schottky diode interface.


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