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For the Inventor, By the Inventor

Singapore, Singapore

Jeoung Mo Koo

This inventor holds 32 USPTO granted patents and 7 published patent applications, primarily in Galvanic Isolation. Top assignees: Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation), Globalfoundries U.S. Inc.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeoung Mo Koo. Retrieved from https://idiyas.com/inventor/jeoung-mo-koo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 84.4

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 32(Granted Patents)


Company Filing History:

goldMedal30 out of 1,058 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal1 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
bronzeMedal1 out of 1,087 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2011-2026

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Areas of Expertise:
Galvanic Isolation
Semiconductor Structures
Transistor Devices
High Voltage
Field-Effect Transistors
Integrated Circuits
Nonvolatile Memory
Metal-Oxide-Semiconductor
Decoupling Capacitor
VDMOS Transistors
ESD Protection
Dielectric-filled Trench
32 patents (USPTO):Explore Patents
1. 12677427 - Electronic device with galvanic isolation and integration methods (2026-07-07),
2. 12660257 - Galvanic isolation using isolation break between redistribution layer electrodes (2026-06-16),
3. 12550725 - Structure for galvanic isolation using dielectric-filled trench in substrate below electrode (2026-02-10),
4. 12538551 - Semiconductor structures for galvanic isolation (2026-01-27),
5. 12525537 - Transistors having backside contact structures (2026-01-13),
6. 12336220 - Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wells (2025-06-17),
7. 12176395 - Structures for a laterally-diffused metal-oxide-semiconductor transistor (2024-12-24),
8. 11955514 - Field-effect transistors with a gate structure in a dual-depth trench isolation structure (2024-04-09),
9. 11862693 - Semiconductor devices including a drain captive structure having an air gap and methods of forming the same (2024-01-02),
10. 11791392 - Extended-drain metal-oxide-semiconductor devices with a notched gate electrode (2023-10-17),
11. 11791379 - Galvanic isolation using isolation break between redistribution layer electrodes (2023-10-17),
12. 11764273 - Semiconductor structures for galvanic isolation (2023-09-19),
13. 11502193 - Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layer (2022-11-15),
14. 11469169 - High voltage decoupling capacitor and integration methods (2022-10-11),
15. 11456306 - Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes (2022-09-27),

Title: Jeoung Mo Koo: Pioneering Inventor from Singapore

Introduction: Jeoung Mo Koo is a highly respected inventor hailing from the vibrant city-state of Singapore. His innovative spirit and dedication to technological advancements have made him a prominent figure in the world of patents and inventions.

Latest Patents: Jeoung Mo Koo's latest patents focus on cutting-edge technologies in the fields of artificial intelligence, renewable energy, and sustainable urban development. His inventions have garnered international recognition for their creativity and practicality.

Career Highlights: With a career spanning over two decades, Jeoung Mo Koo has established himself as a trailblazer in the innovation landscape. His groundbreaking work has revolutionized various industries, setting new standards for excellence and ingenuity.

Collaborations: Throughout his career, Jeoung Mo Koo has collaborated with leading research institutions, universities, and multinational corporations to bring his inventions to life. His collaborative efforts have resulted in the successful commercialization of numerous patented technologies.

Conclusion: Jeoung Mo Koo's passion for innovation and his relentless pursuit of excellence continue to inspire aspiring inventors around the world. His contributions to the field of patents and inventions have left an indelible mark on the industry, shaping the future of technology for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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